Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces

摘要

Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis displaya 1st order metal to insulator transition (MIT) together with a N\'eeltransition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pcNdGaO_3 the MIT occurs at T=335K and the N\'eel transition at T=230 K. Bycomparing transport and magnetic properties of layers grown on substrates withdifferent symmetries and lattice parameters, we demonstrate a particularlylarge tuning when the epitaxy is realized on (111)_pc surfaces. We attributethis effect to the specific lattice matching conditions imposed along thisdirection when using orthorhombic substrates.